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| auirf1404s auirf1404l hexfet ? power mosfet 06/07/11 www.irf.com 1 pd -97680 features advanced planar technology dynamic dv/dt rating 175c operating temperature fast switching fully avalanche rated repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * automotive grade s d g absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress rati ngs only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is no t implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissi pation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. gds gate drain source d 2 pak auirf1404s to-262 auirf1404l g d s g d s hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ symbol parameter units i d @ t c = 25c continuous drain current, vgs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, vgs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c maximum power dissipation w p d @t c = 25c maximum power dissipation linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj i ar avalanche current a e ar repetitive avalanche energy mj dv/dt peak diode recovery v/ns t j operating junction and t stg storage temperature range soldering temperature, for 10 seconds (1.6mm from case) thermal resistance symbol parameter typ. max. units r ??? 0.75 c/w r ??? 40 3.8 200 5.0 20 a c 300 -55 to + 175 20 1.3 519 95 max. 162 115 650 75 description specifically designed for automotive applications, this stripe planar design of hexfet? power mosfets utilizes the latest processing techniques to achieve low on-resistance per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. v dss 40v r ds(on) typ. 3.5m max. 4.0m 1 i d (package limited) 75a
2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. (see fig. 11) i sd 95a, di/dt 150a/ s, v dd v (br)dss , t j 175c. starting t j = 25c, l = 0.12mh r g = 25 , i as = 95a. (see figure 12) pulse width 300 s; duty cycle 2%. s d g c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. use irf1404 data and test conditions. when mounted on 1" square pcb ( fr-4 or g-10 material ). for recommended footprint and soldering techniques refer to application note #an-994. r is measured at t j approximately 90c. static electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 40 ??? ??? v v (br)dss / t j breakdown voltage temp. coefficient ??? 0.036 ??? v/c r ds(on) static drain-to-source on-resistance ??? 3.5 4.0 m v gs(th) gate threshold voltage 2.0 ??? 4.0 v gfs forward transconductance 106 ??? ??? s i dss drain-to-source leakage current ??? ??? 20 a ??? ??? 250 i gss gate-to-source forward leakage ??? ??? 200 na gate-to-source reverse leakage ??? ??? -200 dynamic electrical characteristics @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units q g total gate charge ??? 160 200 nc q gs gate-to-source charge ??? 35 ??? q gd gate-to-drain ("miller") charge ??? 42 60 t d(on) turn-on delay time ??? 17 ??? ns t r rise time ??? 140 ??? t d(off) turn-off delay time ??? 72 ??? t f fall time ??? 26 ??? l s internal source inductance ??? 7.5 ??? nh between lead, and center of die contact c iss input capacitance ??? 7360 ??? pf c oss output capacitance ??? 1680 ??? c rss reverse transfer capacitance ??? 240 ??? c oss output capacitance ??? 6630 ??? c oss output capacitance ??? 1490 ??? c oss eff. effective output capacitance (time related) ??? 1540 ??? diode characteristics symbol parameter min. typ. max. units i s continuous source current ??? ??? 162 a (body diode) i sm pulsed source current ??? ??? 650 a (body diode) v sd diode forward voltage ??? ??? 1.3 v t rr reverse recovery time ??? 71 110 ns q rr reverse recovery charge ??? 180 270 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 0v, v ds = 1.0v, ? = 1.0mhz t j = 25c, i f = 95a di/dt = 100a/ s mosfet symbol showing the v ds = 32v conditions r d = 0.21 v gs = 0v v ds = 25v ? = 1.0 mhz, see fig. 5 v gs = 0v, v ds = 32v, ? = 1.0mhz v gs = 0v, v ds = 0v to 32v t j = 25c, i s = 95a, v gs = 0v integral reverse p-n junction diode. conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1.0ma v gs = 10v, i d = 95a v ds = v gs , i d = 250 a v ds = 40v, v gs = 0v v ds = 32v, v gs = 0v, t j = 125c v ds = 25v, i d = 60a i d = 95a r g = 2.5 v gs = 10v v dd = 20v conditions i d = 95a v gs = 20v v gs = -20v www.irf.com 3 !"#"$ $ % & &' & qualification information ? d2pak msl1 to-262 n/a rohs compliant yes esd machine model class m4 (+/- 425v) ??? aec-q101-002 human body model class h2 (+/- 4000v) ??? aec-q101-001 charged device model class c5 (+/- 1125v) ??? aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. ir?s industrial and consumer qualification level is granted by extension of the higher automotive level. 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 10 100 1000 0.1 1 10 100 20 s pulse width t = 25 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 0.1 1 10 100 20 s pulse width t = 175 c j top bottom vgs 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 4.5v 10 100 1000 4.0 5.0 6.0 7.0 8.0 9.0 v = 25v 20 s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 175 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 159a www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 2000 4000 6000 8000 10000 12000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 40 80 120 160 200 240 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 95a v = 20v ds v = 32v ds 1 10 100 1000 0.4 0.8 1.2 1.6 2.0 2.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 175 c j 1 10 100 1000 10000 1 10 100 operation in this area limited by r ds(on) single pulse t t = 175 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms 1 0.1 % + - 25 50 75 100 125 150 175 0 40 80 120 160 200 t , case temperature ( c) i , drain current (a) c d limited by package 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) www.irf.com 7 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k .2 f 12v current regulator same type as d.u.t. current sampling resistors + - "#( fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v fig 12d. typical drain-to-source voltage vs. avalanche current 0 20 40 60 80 100 i av , avalanche current ( a) 40 42 44 46 48 50 v d s a v , a v a l a n c h e v o l t a g e ( v ) 25 50 75 100 125 150 175 0 200 400 600 800 1000 1200 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 39a 67a 95a 8 www.irf.com fig 14. for n-channel hexfet ? power mosfets + - + + + - - - ? ? ? ? ! " ! ? "#$ ? % & ? "#"'( ! ) ) p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ) *+)"(" www.irf.com 9 note: for the most current drawing please refer to ir website at http://www.irf.com/package/ !"#$#% && && * +,+ --,- .-. , '/01 2 3 0 & 0 10 www.irf.com to-262 package outline dimensions are shown in millimeters (inches) to-262 part marking information note: for the most current drawing please refer to ir website at http://www.irf.com/package/ !"#$#' && && * +,+ --,- .-. , '/01 2 3 0 & 0 www.irf.com 11 ( ) dimensions are shown in millimeters (inches) 3 4 4 trr feed direction 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) trl feed direction 10.90 (.429) 10.70 (.421) 16.10 (.634) 15.90 (.626) 1.75 (.069) 1.25 (.049) 11.60 (.457) 11.40 (.449) 15.42 (.609) 15.22 (.601) 4.72 (.136) 4.52 (.178) 24.30 (.957) 23.90 (.941) 0.368 (.0145) 0.342 (.0135) 1.60 (.063) 1.50 (.059) 13.50 (.532) 12.80 (.504) 330.00 (14.173) max. 27.40 (1.079) 23.90 (.941) 60.00 (2.362) min. 30.40 (1.197) max. 26.40 (1.039) 24.40 (.961) notes : 1. comforms to eia-418. 2. controlling dimension: millimeter. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 12 www.irf.com ordering information base part number package type standard pack complete part number form quantity auirf1404s d2pak tube 50 auirf1404s tape and reel left 800 auirf1404strl tape and reel right 800 AUIRF1404STRR auirf1404l to-262 tube 50 auirf1404l www.irf.com 13 ! " #$% & ' ( ! $ ) * ! * ! + ( ( & ! ,& ( ! ! ! + - ( ! ! ! ! ) ! & ! ! - ) ! . / - / & ) - ! 0 1 $ 1$ . 1$ ( ! / 1$ 2 ( / * ( ! .0'+. 34565 ( #$%! / 2 ( ! 1 / 4 ! ,$ - ./ $( .!)0 12+ 345 61+1 7 + |
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